Kingston 4GB DDR4 Laptop Note Book Memory KVR26S19S6/4 PC4 2666Mhz

රු5,500.00රු8,000.00 (-31%)

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4GB Module – DDR4 – 2666MHz
  • 4GB DDR4 Memory
  • 2666Mhz Speed
  • PC4 – 21330 
  • Part Number: KVR26N19S6/4
  • 1.2V low Voltage
  • Unbuffered, DIMM
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SKU: kingston-4gb-ddr4-laptop-note-book-memory-kvr26s19s6-4-pc4-2666mhz Categories: ,

Overview

KVR26S19S6/4

ValueRAM, Kingston’s industry-standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.

4GB Module – DDR4 – 2666MHz
  • Part Number: KVR26S19S6/4
  • Specs: DDR4, 2666MHz, Non-ECC, CL19, 1.2V, Unbuffered, DIMM, 1R, 8Gbit

More Details

Additional information

Condition

NEW

Manufacture

RAM - Memory

Memory Type

DDR4 LAPTOP

Memory Speed

2666Mhz

Warranty

Life Time Warranty

Specifications

Specifications

KVR26S19S6/4
4GB 1Rx16 512M x 64-Bit PC4-2666Mhz
CL19 260-Pin DIMM

DESCRIPTION

This document describes ValueRAM’s KVR26S19S6/4 as a
512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous
DRAM), 1Rx16, memory module, based on four 512M x 16-bit
FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This
260-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows: :

FEATURES

  • Power Supply: VDD = 1.2V Typical
  • VDDQ = 1.2V Typical
  • VPP = 2.5V Typical
  • VDDSPD = 2.2V to 3.6V
  • Nominal and dynamic on-die termination (ODT) for
    data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 8 internal banks; 2 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8
    via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • PCB: Height 1.18” (30.00mm)
  • RoHS Compliant and Halogen-Free
SPECIFICATIONS

CL(IDD)19 cycles
Row Cycle Time (tRCmin)45.75ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
350ns (min.)
Row Active Time (tRASmin)32ns (min.)
Maximum Operating Power(1.2V) = TBD W*
UL Rating94 V – 0
Operating Temperature0o C to 85o C
Storage Temperature-55o C to +100o C

 

 

 

 

 

 

 

 

 

 

 

 

 

 


Importan
t Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may vary from what is described here.

 

 

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